AS4C128M32MD2A-25BIN

Alliance Memory
913-4C12832MD2A25BIN
AS4C128M32MD2A-25BIN

Mfr.:

Paglalarawan:
DRAM LPDDR2, 4G, 128M X 32, 1.2V, 134 BALL BGA, 400MHZ, Industrial TEMP - Tray

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 86

Stock:
86 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱1,141.44 ₱1,141.44
₱1,058.50 ₱10,585.00
₱1,025.44 ₱25,636.00
₱1,000.50 ₱50,025.00
₱957.00 ₱95,700.00
₱932.64 ₱156,683.52
₱899.58 ₱453,388.32
1,008 Quote

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Alliance Memory
Kategorya ng Produkto: DRAM
RoHS:  
SDRAM Mobile - LPDDR2
4 Gbit
32 bit
400 MHz
FBGA-134
128 M x 32
5.5 ns
1.14 V
1.95 V
- 40 C
+ 85 C
AS4C128M32MD2A-25
Tray
Brand: Alliance Memory
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: TW
Maselan sa Moisture: Yes
Isitilo ng Mounting: SMD/SMT
Uri ng Produkto: DRAM
Dami ng Pack ng Pabrika: 168
Subcategory: Memory & Data Storage
Supply Current - Max: 130 mA
Timbang ng Unit: 2.191 g
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Mga Piniling Attribute: 0

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320201
ECCN:
EAR99

DDR2 SDRAM

Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1, and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.

Low-Power DDR2 SDRAM

Alliance Memory Low-Power DDR2 SDRAM are high-speed CMOS and dynamic-access memory internally configured as an 8-bank device. These DDR2 SDRAM feature 4-bit pre-fetch DDR architecture, programmable READ and WRITE latencies, auto Temperature Compensated Self Refresh (TCSR), and clock stop capability. The DDR2 SDRAM reduces the number of input pins in the system by using a double data rate architecture on the Command/Address (CA) bus. This CA bus transmits address, command, and bank information. These DDR2 SDRAM can achieve high-speed operation by using a double data rate architecture on the DQ (bidirectional/differential data bus) pins.