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IXFA10N80P

Name: IXYS IXFA10N80P
Brand: IXYS
SKU: 747-IXFA10N80P
Price: 321.32 PHP
Availability: InStock

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Mouser #:

747-IXFA10N80P

Mfr. #:

IXFA10N80P

Mfr.:

IXYS

Paglalarawan:

MOSFETs 10 Amps 800V 1.1 Rds

Datasheet:

IXFA10N80P Datasheet

ECAD Model:

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May Stock: 8,959

Stock:: 8,959 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 27 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱321.32	₱321.32
	₱168.78	₱1,687.80
	₱153.70	₱15,370.00
	₱141.52	₱70,760.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	IXYS
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	D2PAK-3 (TO-263-3)
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	1.1 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	40 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	KR
Tagal ng Pagbagsak:	22 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	22 ns
Series:	IXFA10N80P
Dami ng Pack ng Pabrika:	50
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	62 ns
Karaniwang Tagal ng Delay ng Pag-on:	21 ns
Timbang ng Unit:	4 g

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Datasheet

IXFA10N80P Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.