Tila naka-disable ang JavaScript sa loob ng iyong browser. Hindi gagana ang ilang function sa page na ito maliban kung mag-log in ka.

May Nakikitang Error?

IXFB100N50P

Name: IXYS IXFB100N50P
Brand: IXYS
SKU: 747-IXFB100N50P
Price: 1792.78 PHP
Availability: InStock

Reference lang ang mga larawan
Tingnan ang Mga Ispesipikasyon ng Produkto

Mouser #:

747-IXFB100N50P

Mfr. #:

IXFB100N50P

Mfr.:

IXYS

Paglalarawan:

MOSFETs 100 Amps 500V 0.05 Ohms Rds

Datasheet:

IXFB100N50P Datasheet

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

Higit Pang Impormasyon

Alamin pa ang tungkol sa IXYS IXFB100N50P

May Stock: 467

Stock:: 467

Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Inoorder:: 300

Inaasahan 5/18/2026
Lead-Time ng Pabrika:: 37

(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,792.78	₱1,792.78
	₱1,432.02	₱14,320.20
	₱1,288.18	₱128,818.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	IXYS
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	PLUS-264-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	49 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	240 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 kW
Channel Mode:	Enhancement
Pangalang pangkalakal:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	PH
Tagal ng Pagbagsak:	26 ns
Forward Transconductance - Min:	50 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	29 ns
Series:	IXFB100N50
Dami ng Pack ng Pabrika:	25
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	110 ns
Karaniwang Tagal ng Delay ng Pag-on:	36 ns
Timbang ng Unit:	1.600 g

Nahanap na mga produkto:

Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang

Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.

Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

IXFB100N50P Datasheet

Kailangang i-enable ang JavaScript para gumana ito.

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.