1EDI3025ASXUMA1

Infineon Technologies
726-1EDI3025ASXUMA1
1EDI3025ASXUMA1

Mfr.:

Paglalarawan:
Gate Drivers HVGD_TRACT

Lifecycle:
Bagong Produkto:
Bago mula sa manufacturer na ito.
ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 5

Stock:
5 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱251.72 ₱251.72
₱190.24 ₱1,902.40
₱175.16 ₱4,379.00
₱157.76 ₱15,776.00
₱150.22 ₱37,555.00
₱145.00 ₱72,500.00
Buo Reel (Mag-order sa multiple ng 1000)
₱133.98 ₱133,980.00
₱129.34 ₱258,680.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Infineon
Kategorya ng Produkto: Mga Gate Driver
RoHS:  
IGBT Drivers
High-Side, Low-Side
SMD/SMT
DSO-20
1 Output
15 A
3 V
5.5 V
Inverting, Non-Inverting
55 ns
45 ns
- 40 C
+ 150 C
Reel
Cut Tape
Brand: Infineon Technologies
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: DE
Maselan sa Moisture: Yes
Supply Current ng Pagpapatakbo: 5 mA
Uri ng Produkto: Gate Drivers
Propagation Delay - Max: 90 ns
Rds On - Drain-Source Resistance: 3 Ohms
Dami ng Pack ng Pabrika: 1000
Subcategory: PMIC - Power Management ICs
Teknolohiya: SiC
Pangalang pangkalakal: EiceDriver
Mga Alias ng # ng Piyesa : 1EDI3025AS SP005741499
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Mga Piniling Attribute: 0

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CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

EiceDRIVER™ High-Voltage Gate Driver ICs

Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs for Electric Vehicle (EV) applications include automotive-qualified IGBT driver ICs and SiC MOSFET driver ICs. The Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs provide galvanic isolation and bidirectional signal transmission with high ambient temperature capability. The ICs enable extremely short propagation delays and support IGBT and SiC technologies up to 1200V. The devices incorporate key features/parameters to drive SiC MOSFETs such as an enhanced switching behavior (extended CMTI capability, fast propagation delay, switching frequency), wide output-side supply range, short internal dead time, and DESAT/OCP threshold level adaptation. Advanced monitoring and protection features facilitate the implementation of ISO 26262 functional safety requirements and provide stable operation in harsh EMC environments.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.