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1EDI3025ASXUMA1

Name: Infineon 1EDI3025ASXUMA1
Brand: Infineon Technologies
SKU: 726-1EDI3025ASXUMA1
Price: 251.72 PHP
Availability: InStock

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Mouser #:

726-1EDI3025ASXUMA1

Mfr. #:

1EDI3025ASXUMA1

Mfr.:

Infineon Technologies

Paglalarawan:

Gate Drivers HVGD_TRACT

Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

1EDI3025ASXUMA1 Datasheet (PDF)

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May Stock: 5

Stock:: 5 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱251.72	₱251.72
	₱190.24	₱1,902.40
	₱175.16	₱4,379.00
	₱157.76	₱15,776.00
	₱150.22	₱37,555.00
	₱145.00	₱72,500.00
Buo Reel (Mag-order sa multiple ng 1000)
	₱133.98	₱133,980.00
	₱129.34	₱258,680.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga Gate Driver
RoHS:
Produkto:	IGBT Drivers
Uri:	High-Side, Low-Side
Isitilo ng Mounting:	SMD/SMT
Package / Case:	DSO-20
Dami ng Output:	1 Output
Current ng Output:	15 A
Supply Voltage - Min:	3 V
Supply Voltage - Max:	5.5 V
Kumpigurasyon:	Inverting, Non-Inverting
Tagal ng Pagtaas:	55 ns
Tagal ng Pagbagsak:	45 ns
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	DE
Maselan sa Moisture:	Yes
Supply Current ng Pagpapatakbo:	5 mA
Uri ng Produkto:	Gate Drivers
Propagation Delay - Max:	90 ns
Rds On - Drain-Source Resistance:	3 Ohms
Dami ng Pack ng Pabrika:	1000
Subcategory:	PMIC - Power Management ICs
Teknolohiya:	SiC
Pangalang pangkalakal:	EiceDriver
Mga Alias ng # ng Piyesa :	1EDI3025AS SP005741499

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Mga Piniling Attribute: 0

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Datasheet

1EDI3025ASXUMA1 Datasheet (PDF)

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CNHTS:: 8542399000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

EiceDRIVER™ High-Voltage Gate Driver ICs

Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs for Electric Vehicle (EV) applications include automotive-qualified IGBT driver ICs and SiC MOSFET driver ICs. The Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs provide galvanic isolation and bidirectional signal transmission with high ambient temperature capability. The ICs enable extremely short propagation delays and support IGBT and SiC technologies up to 1200V. The devices incorporate key features/parameters to drive SiC MOSFETs such as an enhanced switching behavior (extended CMTI capability, fast propagation delay, switching frequency), wide output-side supply range, short internal dead time, and DESAT/OCP threshold level adaptation. Advanced monitoring and protection features facilitate the implementation of ISO 26262 functional safety requirements and provide stable operation in harsh EMC environments.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.