IDD08SG60CXTMA2

Infineon Technologies
726-IDD08SG60CXTMA2
IDD08SG60CXTMA2

Mfr.:

Paglalarawan:
SiC Schottky Diodes SIC DIODES

Lifecycle:
NRND:
Hindi inirerekomenda para sa mga bagong disenyo.
ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 5,043

Stock:
5,043 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
52 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱263.32 ₱263.32
₱174.00 ₱1,740.00
₱123.54 ₱12,354.00
₱118.90 ₱59,450.00
₱114.26 ₱114,260.00
Buo Reel (Mag-order sa multiple ng 2500)
₱106.72 ₱266,800.00

Katulad na Produkto

Infineon Technologies IDL08G65C5XUMA2
Infineon Technologies
SiC Schottky Diodes SIC DIODES

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Infineon
Kategorya ng Produkto: Mga SiC Schottky Diode
RoHS:  
SMD/SMT
TO-252-3
Single
8 A
600 V
1.8 V
42 A
600 nA
- 55 C
+ 175 C
XDD08SG60
Reel
Cut Tape
Brand: Infineon Technologies
Bansa ng Pag-assemble: MY
Bansa ng Diffusion: AT
Bansang Pinagmulan: AT
Pd - Power Dissipation: 100 W
Uri ng Produkto: SiC Schottky Diodes
Dami ng Pack ng Pabrika: 2500
Subcategory: Diodes & Rectifiers
Pangalang pangkalakal: CoolSiC
Vr - Reverse Voltage: 600 V
Mga Alias ng # ng Piyesa : IDD08SG60C SP001632510
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

600V CoolSiC™ Schottky Diodes

Infineon 600V CoolSiC™ Schottky Diodes feature low device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. These devices are available in the TO-220 and D2PAK packages. The small form factor of the DPAK makes it particularly interesting for high-power density surface mount designs. The introduction of the DPAK further extends Infineon's product offering to account for different customer needs.