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IDH08G120C5XKSA1

Name: Infineon IDH08G120C5XKSA1
Brand: Infineon Technologies
SKU: 726-IDH08G120C5XKSA1
Price: 228.52 PHP
Availability: InStock

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Mouser #:

726-IDH08G120C5XKSA1

Mfr. #:

IDH08G120C5XKSA1

Mfr.:

Infineon Technologies

Paglalarawan:

SiC Schottky Diodes SIC CHIP/DISCRETE

Datasheet:

IDH08G120C5XKSA1 Datasheet (PDF)

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May Stock: 977

Stock:: 977 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 30 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

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Presyo ng Unit:

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Ext. Presyo:

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Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱228.52	₱228.52
	₱149.06	₱1,490.60
	₱117.16	₱11,716.00
	₱97.44	₱48,720.00
	₱85.26	₱85,260.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220-2
Kumpigurasyon:	Single
If - Forward Current:	8 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.65 V
Ifsm - Forward Surge Current:	70 A
Ir - Reverse Current:	3 uA
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	IDH08G120C5
Packaging:	Tube
Brand:	Infineon Technologies
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	AT
Pd - Power Dissipation:	126 W
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	500
Subcategory:	Diodes & Rectifiers
Pangalang pangkalakal:	CoolSiC
Vr - Reverse Voltage:	1.2 kV
Mga Alias ng # ng Piyesa :	IDH08G120C5 SP001194252
Timbang ng Unit:	6 g

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CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Mga 1200V CoolSiC Schottky Diode

Ang mga Infineon 1200V CoolSiC Schottky Diodes ay inilalaan kasama ng mga forward current na hanggang 40A para saTO-247, 20A sa TO-220 at 10A sa DPAK Tinatarget ng mga CoolSiC Diode ang mga solar inverter, UPS, 3P SMPS, imbakan ng enerhiya at mga motor drive na application. Sa pagbabawas ng forward voltage at pag-dedepend sa temperatura, ang mga diode ay nagdadala ng bagong antas ng kahusayan ng sistema. Higit pa, ang pinabuting thermal performance kumpara sa naka-silicon base na solusyon ay nagdaragdag sa pagiging maaasahan ng sistema at ang posibilidad na madagdagan ang lakas ng output sa nasabing form factor. Kasama ng Si HighSpeed 3 IGBT, sila ay naghahatid ng 40% na mas mababang mga Si IGBT turn-on loss at nabawasang EMI.
Matuto Nang Higit Pa

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.