IR2128SPBF
Tingnan ang Mga Ispesipikasyon ng Produkto
Mfr.:
Paglalarawan:
Gate Drivers 1 HI SIDE DRVR INVERTING INPUT
May Stock: 3,668
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Stock:
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3,668 Maaaring Ipadala AgadMay nangyaring di-inaasahang error. Subukan ulit mamaya.
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Lead-Time ng Pabrika:
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24 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Presyo (PHP)
| Dami | Presyo ng Unit |
Ext. Presyo
|
|---|---|---|
| ₱157.18 | ₱157.18 | |
| ₱117.16 | ₱1,171.60 | |
| ₱96.28 | ₱2,407.00 | |
| ₱92.22 | ₱9,222.00 | |
| ₱89.90 | ₱22,475.00 | |
| ₱87.00 | ₱43,500.00 | |
| ₱78.88 | ₱78,880.00 | |
| ₱73.08 | ₱182,700.00 | |
| ₱72.50 | ₱275,500.00 |
Alternatibong Packaging
Datasheet
Application Notes
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- IRS212(7,8,71) and IR212(7,8,71) Comparison (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
- Using the Current Sensing IR212x Gate Driver ICs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542310075
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
Philippines
