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S29GL01GS10TFI020

Name: Infineon S29GL01GS10TFI020
Brand: Infineon Technologies
SKU: 797-S29GL01GS10TFI02
Price: 724.42 PHP
Availability: InStock

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Mouser #:

797-S29GL01GS10TFI02

Mfr. #:

S29GL01GS10TFI020

Mfr.:

Infineon Technologies

Paglalarawan:

NOR Flash 1G 3V 100ns Parallel NOR Flash

Datasheet:

S29GL01GS10TFI020 Datasheet (PDF)

ECAD Model:

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May Stock: 1,562

Stock:: 1,562 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 3 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱724.42	₱724.42
	₱689.62	₱6,896.20
	₱570.14	₱14,253.50
	₱550.42	₱27,521.00
	₱537.08	₱53,708.00
	₱528.96	₱132,240.00
	₱517.94	₱258,970.00
	₱517.36	₱470,797.60

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	NOR Flash
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	TSOP-56
Series:	S29GL01G/512/256/128S
Laki ng Memory:	1 Gbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Aktibong Read Current - Max:	60 mA
Uri ng Interface:	Parallel
Organisasyon:	64 M x 16
Lapad ng Data Bus:	16 bit
Uri ng Timing:	Asynchronous
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 85 C
Packaging:	Tray
Brand:	Infineon Technologies
Bansa ng Pag-assemble:	TH
Bansa ng Diffusion:	CN
Bansang Pinagmulan:	CN
Maselan sa Moisture:	Yes
Uri ng Produkto:	NOR Flash
Bilis:	100 ns
Dami ng Pack ng Pabrika:	910
Subcategory:	Memory & Data Storage
Pangalang pangkalakal:	MirrorBit
Timbang ng Unit:	17.327 g

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Datasheet

S29GL01GS10TFI020 Datasheet (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
JPHTS:: 8542320312
KRHTS:: 8542321040
TARIC:: 8542326100
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

MIRRORBIT™ NOR GL Flash Memory Device

Infineon Technologies MIRRORBIT™ NOR GL Flash Memory Devices include the 100ns access speeds. This additional offering of Cypress MIRRORBIT NOR GL Flash Memory now provides the fastest access times in the high-density versions available. MIRRORBIT NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption. Cypress MIRRORBIT GL NOR Flash family is optimized for various embedded applications' voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB to 2GB, each MIRRORBIT NOR GL Flash Memory Device requires only a 3.0V power supply for reading and writing functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MIRRORBIT GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.

S29GL01G/512/256/128S MIRRORBIT™ Flash Memory

Infineon Technologies S29GL01G/512/256/128S MIRRORBIT™ Eclipse Flash Memory is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MIRRORBIT Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set is compatible with the JEDEC Flash standards. The MIRRORBIT GL Flash Memory Device family supports Universal Footprint, which provides one footprint across all densities. The flash memory also supports product families and process technologies. This allows manufacturers to design single platform and simple scale Flash memory capacity up or down, depending on features and functionality.

S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.