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MSC010SDA170B

Name: Microchip MSC010SDA170B
Brand: Microchip Technology
SKU: 494-MSC010SDA170B
Price: 512.14 PHP
Availability: OutOfStock

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Mouser #:

494-MSC010SDA170B

Mfr. #:

MSC010SDA170B

Mfr.:

Microchip Technology

Paglalarawan:

SiC Schottky Diodes UNRLS, FG, GEN2 SIC SBD

Tingnan sa Development Tools Selector

Datasheet:

MSC010SDA170B Datasheet

ECAD Model:

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Availability

Stock:: 0

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Lead-Time ng Pabrika:: 4 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱512.14	₱512.14
	₱472.12	₱14,163.60
	₱410.64	₱49,276.80

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Microchip
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-2
Kumpigurasyon:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	1.7 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	90 A
Ir - Reverse Current:	200 uA
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	MSC0
Packaging:	Tube
Brand:	Microchip Technology
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	PH
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.7 kV
Timbang ng Unit:	13.047 g

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CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.