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SCT070HU120G3AG

Name: STMicroelectronics SCT070HU120G3AG
Brand: STMicroelectronics
SKU: 511-SCT070HU120G3AG
Price: 773.14 PHP
Availability: InStock

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Mouser #:

511-SCT070HU120G3AG

Mfr. #:

SCT070HU120G3AG

Mfr.:

STMicroelectronics

Paglalarawan:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

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Datasheet:

SCT070HU120G3AG Datasheet (PDF)

ECAD Model:

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May Stock: 3

Stock:: 3 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 22 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱773.14	₱773.14
	₱533.60	₱5,336.00
	₱479.66	₱47,966.00
Buo Reel (Mag-order sa multiple ng 600)
	₱458.20	₱274,920.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	HU3PAK-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	87 mOhms
Vgs - Gate-Source Voltage:	- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	37 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	223 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	JP
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	JP
Tagal ng Pagbagsak:	9.9 ns
Packaging:	Reel
Packaging:	Cut Tape
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	26.6 ns
Dami ng Pack ng Pabrika:	600
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	17.6 ns
Karaniwang Tagal ng Delay ng Pag-on:	18.7 ns

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Datasheet

SCT070HU120G3AG Datasheet (PDF)

PCN

Product Change Notification 2025-5-3 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

Mga Automotive-Grade Silicon Carbide Power MOSFET

Ang mga STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFET ay na-develop gamit ang advanced at makabagong 2nd/3rd generation SiC MOSFET technology. Nagtatampok ang mga device ng mababang on-resistance kada unit area at napakahusay na switching performance. Ang mga MOSFET ay nagtatampok ng napakataas na operating temperature capability (TJ = 200°C), at napakabilis at napakatibay na intrinsic body diode.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.