Tila naka-disable ang JavaScript sa loob ng iyong browser. Hindi gagana ang ilang function sa page na ito maliban kung mag-log in ka.

May Nakikitang Error?

SGT080R70ILB

Name: STMicroelectronics SGT080R70ILB
Brand: STMicroelectronics
SKU: 511-SGT080R70ILB
Price: 349.16 PHP
Availability: OutOfStock

Reference lang ang mga larawan
Tingnan ang Mga Ispesipikasyon ng Produkto

Mouser #:

511-SGT080R70ILB

Mfr. #:

SGT080R70ILB

Mfr.:

STMicroelectronics

Paglalarawan:

GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor

Kumpletuhin ang Iyong Disenyo

Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

SGT080R70ILB Datasheet (PDF)

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

Higit Pang Impormasyon

Alamin pa ang tungkol sa STMicroelectronics SGT080R70ILB

Availability

Stock:: 0

Mabibili mo pa rin ang produktong ito para sa backorder.

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 52 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Matagal na lead time na iniulat sa produktong ito.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 3000)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱349.16	₱349.16
	₱257.52	₱2,575.20
	₱208.80	₱20,880.00
	₱201.84	₱100,920.00
	₱194.88	₱194,880.00
Buo Reel (Mag-order sa multiple ng 3000)
	₱185.60	₱556,800.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	GaN FETs
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	PowerFLAT-8
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 6 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	6.2 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	Not Available
Tagal ng Pagbagsak:	4 ns
Maselan sa Moisture:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Produkto:	FET
Uri ng Produkto:	GaN FETs
Tagal ng Pagtaas:	4 ns
Series:	SGT
Dami ng Pack ng Pabrika:	3000
Subcategory:	Transistors
Teknolohiya:	GaN
Uri:	PowerGaN Transistor
Karaniwang Tagal ng Delay ng Pag-off:	5 ns
Karaniwang Tagal ng Delay ng Pag-on:	3 ns
Timbang ng Unit:	154 mg

Nahanap na mga produkto:

Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang

Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.

Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

SGT080R70ILB Datasheet (PDF)

Kailangang i-enable ang JavaScript para gumana ito.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SGT080R70ILB E-Mode PowerGaN Transistor

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor is an enhancement-mode transistor designed for high-efficiency power conversion applications. Featuring a drain-source voltage rating of 700V and a typical on-resistance of just 80mΩ, the STMicroelectronics SGT080R70ILB leverages the superior switching performance of Gallium Nitride (GaN) technology to minimize conduction and switching losses. Housed in a compact PowerFLAT 8x8 HV package, the transistor supports high-frequency operation and is ideal for use in resonant converters, power factor correction (PFC) stages, and DC-DC converters. A low gate charge and output capacitance enable faster transitions and reduced energy dissipation, making the SGT080R70ILB well-suited for demanding applications in consumer electronics, industrial systems, and data centers.

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.