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STGWA15H120DF2

Name: STMicroelectronics STGWA15H120DF2
Brand: STMicroelectronics
SKU: 511-STGWA15H120DF2
Price: 267.38 PHP
Availability: InStock

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Mouser #:

511-STGWA15H120DF2

Mfr. #:

STGWA15H120DF2

Mfr.:

STMicroelectronics

Paglalarawan:

IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

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Datasheet:

STGWA15H120DF2 Datasheet (PDF)

ECAD Model:

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May Stock: 501

Stock:: 501 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱267.38	₱267.38
	₱176.90	₱1,769.00
	₱125.86	₱12,586.00
	₱109.04	₱65,424.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga IGBT
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Kumpigurasyon:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.5 V
Maximum na Gate Emitter Voltage:	- 20 V, 20 V
Tuloy-tuloy na Collector Current sa 25 C:	30 A
Pd - Power Dissipation:	259 W
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	STGWA15H120DF2
Packaging:	Tube
Brand:	STMicroelectronics
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Gate-Emitter Leakage Current:	250 nA
Uri ng Produkto:	IGBT Transistors
Dami ng Pack ng Pabrika:	600
Subcategory:	IGBTs
Timbang ng Unit:	6.100 g

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Mga Piniling Attribute: 0

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Datasheet

STGWA15H120DF2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.