STGWA40IH65DF

STMicroelectronics
511-STGWA40IH65DF
STGWA40IH65DF

Mfr.:

Paglalarawan:
IGBTs Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo

ECAD Model:
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Availability

Stock:
0

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Lead-Time ng Pabrika:
14 (na) Linggo Tinatayang oras ng paggawa sa pabrika.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱244.18 ₱244.18
₱135.14 ₱1,351.40
₱96.28 ₱9,628.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.5 V
- 20 V, 20 V
80 A
238 W
- 55 C
+ 175 C
STGWA40IH65DF
Tube
Brand: STMicroelectronics
Tuloy-tuloy na Collector Current Ic Max: 80 A
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: CN
Gate-Emitter Leakage Current: 250 nA
Uri ng Produkto: IGBT Transistors
Dami ng Pack ng Pabrika: 600
Subcategory: IGBTs
Timbang ng Unit: 6.100 g
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Mga Piniling Attribute: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower VCE(sat)  combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.