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STGWT60H65DFB

Name: STMicroelectronics STGWT60H65DFB
Brand: STMicroelectronics
SKU: 511-STGWT60H65DFB
Price: 276.66 PHP
Availability: InStock

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Mouser #:

511-STGWT60H65DFB

Mfr. #:

STGWT60H65DFB

Mfr.:

STMicroelectronics

Paglalarawan:

IGBTs 650V 60A HSpd trench gate field-stop IGBT

Kumpletuhin ang Iyong Disenyo

Datasheet:

STGWT60H65DFB Datasheet (PDF)

ECAD Model:

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May Stock: 287

Stock:: 287 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱276.66	₱276.66
	₱150.22	₱1,502.20
	₱127.02	₱12,702.00
	₱113.68	₱68,208.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga IGBT
RoHS:
Teknolohiya:	Si
Package / Case:	TO-3P
Isitilo ng Mounting:	Through Hole
Kumpigurasyon:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum na Gate Emitter Voltage:	- 20 V, 20 V
Tuloy-tuloy na Collector Current sa 25 C:	80 A
Pd - Power Dissipation:	375 W
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	STGWT60H65DFB
Packaging:	Tube
Brand:	STMicroelectronics
Tuloy-tuloy na Collector Current Ic Max:	60 A
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	KR
Gate-Emitter Leakage Current:	250 nA
Uri ng Produkto:	IGBT Transistors
Dami ng Pack ng Pabrika:	300
Subcategory:	IGBTs
Timbang ng Unit:	6.756 g

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Mga Piniling Attribute: 0

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Datasheet

STGWT60H65DFB Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.