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STP2N80K5

Name: STMicroelectronics STP2N80K5
Brand: STMicroelectronics
SKU: 511-STP2N80K5
Price: 62.64 PHP
Availability: InStock

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Mouser #:

511-STP2N80K5

Mfr. #:

STP2N80K5

Mfr.:

STMicroelectronics

Paglalarawan:

MOSFETs N-CH 800V 3.5Ohm typ 2A Zener-protected

Kumpletuhin ang Iyong Disenyo

Datasheet:

STP2N80K5 Datasheet (PDF)

ECAD Model:

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May Stock: 2,819

Stock:: 2,819

Maaaring Ipadala Agad

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Inoorder:: 2,000

Inaasahan 4/27/2026
Lead-Time ng Pabrika:: 16

(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱62.64	₱62.64
	₱36.77	₱367.70
	₱34.45	₱3,445.00
	₱30.68	₱15,340.00
	₱29.41	₱29,410.00
	₱26.39	₱52,780.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	3.5 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	3 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Uri ng Produkto:	MOSFETs
Series:	STP2N80K5
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Timbang ng Unit:	2 g

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Mga Piniling Attribute: 0

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Datasheet

STP2N80K5 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

STMicroelectronics SuperMESH High Voltage MOSFETs - Thru-Hole

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.