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CSD16409Q3

Name: Texas Instruments CSD16409Q3
Brand: Texas Instruments
SKU: 595-CSD16409Q3
Price: 86.42 PHP
Availability: InStock

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Mouser #:

595-CSD16409Q3

Mfr. #:

CSD16409Q3

Mfr.:

Texas Instruments

Paglalarawan:

MOSFETs N-Ch NexFET Power MO SFETs

Datasheet:

CSD16409Q3 Datasheet

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

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Alamin pa ang tungkol sa Texas Instruments CSD16409Q3

May Stock: 2,322

Stock:: 2,322 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 6 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 2500)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱86.42	₱86.42
	₱54.52	₱545.20
	₱36.25	₱3,625.00
	₱28.42	₱14,210.00
	₱25.93	₱25,930.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱23.14	₱57,850.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Texas Instruments
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	VSON-CLIP-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	9.5 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	4 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.6 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	PH
Tagal ng Pagbagsak:	3.4 ns
Forward Transconductance - Min:	38 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	10.6 ns
Series:	CSD16409Q3
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	6.3 ns
Karaniwang Tagal ng Delay ng Pag-on:	6.5 ns
Timbang ng Unit:	41.800 mg

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Mga Piniling Attribute: 0

I-filter ang Dokumento:

PCN

Product Catalogs

Power Management Guide 2018 (Rev. R)

SPICE Models

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.