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CSD17309Q3

Name: Texas Instruments CSD17309Q3
Brand: Texas Instruments
SKU: 595-CSD17309Q3
Price: 96.28 PHP
Availability: InStock

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Mouser #:

595-CSD17309Q3

Mfr. #:

CSD17309Q3

Mfr.:

Texas Instruments

Paglalarawan:

MOSFETs 30V N Channel NexFET Power MOSFET

Datasheet:

CSD17309Q3 Datasheet

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

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Alamin pa ang tungkol sa Texas Instruments CSD17309Q3

May Stock: 5,087

Stock:: 5,087 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 6 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 2500)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱96.28	₱96.28
	₱61.48	₱614.80
	₱40.89	₱4,089.00
	₱32.25	₱16,125.00
	₱29.46	₱29,460.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱27.03	₱67,575.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Texas Instruments
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	VSON-CLIP-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	5.4 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	7.5 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.8 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	PH
Bansa ng Diffusion:	TW
Bansang Pinagmulan:	PH
Kit sa Pag-develop:	DLPDLCR4710EVM-G2, TPS65982-EVM, TPS65983EVM
Tagal ng Pagbagsak:	3.6 ns
Forward Transconductance - Min:	67 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	9.9 ns
Series:	CSD17309Q3
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	13.2 ns
Karaniwang Tagal ng Delay ng Pag-on:	6.1 ns
Timbang ng Unit:	44.500 mg

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Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

CSD17309Q3 Datasheet

Models

CSD17309Q3 Symbol & Footprint by SnapMagic

PCN

Product Catalogs

Power Management Guide 2018 (Rev. R)

SPICE Models

Technical Resources

CSD17309Q3 TINA-TI Reference Design

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

CSD17309Q3 NexFET™ Power MOSFET

Texas Instruments CSD17309Q3 30V N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5V gate drive applications. The Texas Instruments CSD17309Q3 N-Channel NexFET MOSFET features ultra-low on-resistance and low thermal resistance. This MOSFET is ideal for notebook point of load and point-of-load synchronous buck in networking, telecom, and computing systems applications.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.