LF298M/NOPB

Texas Instruments
926-LF298M/NOPB
LF298M/NOPB

Mfr.:

Paglalarawan:
Sample & Hold Amplifiers Monolithic Sample & Hold Circuit A 926-L A 926-LF298MX/NOPB

ECAD Model:
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May Stock: 436

Stock:
436 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
18 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1   Maximum: 110
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱183.86 ₱183.86
₱138.04 ₱1,380.40
₱118.90 ₱2,972.50
₱113.10 ₱12,441.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Texas Instruments
Kategorya ng Produkto: Mga Sample at Hold Amplifier
RoHS:  
LF298
1 Channel
20 us
18 V
5 V
- 25 C
+ 85 C
SMD/SMT
SOIC-14
Tube
Bandwidth: 1 MHz
Brand: Texas Instruments
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: PH
Uri ng Input: Analog
Produkto: Sample and Hold Amplifiers
Uri ng Produkto: Sample & Hold Amplifiers
Dami ng Pack ng Pabrika: 55
Subcategory: Amplifier ICs
Teknolohiya: BI-FET
Timbang ng Unit: 338 mg
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Mga Piniling Attribute: 0

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CNHTS:
8542339000
CAHTS:
8542330000
USHTS:
8542330001
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330299
ECCN:
EAR99

LF298 Monolithic Sample & Hold Circuits

Texas Instruments LF298 Monolithic Sample-and-Hold Circuits are monolithic sample-and-hold circuits utilizing BI-FET technology to achieve ultra-high DC accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, the device offers 0.002% typical DC gain accuracy and an acquisition time as low as 6µs to 0.01%. Through a bipolar input stage, the LF298 obtains a low offset voltage and wide bandwidth. The wide bandwidth allows the LF198 to be included inside the feedback loop of 1MHz op amps without stability problems. Input offset adjust is accomplished with a single pin, and does not degrade input offset drift. Input impedance of 1010Ω allows high source impedances to be used without degrading accuracy. P-channel junction FETs are combined with bipolar devices in the output amplifier to provide droop rates as low as 5mV/min with a 1µF hold capacitor.