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FOD8332R2V

Name: onsemi FOD8332R2V
Brand: onsemi
SKU: 512-FOD8332R2V
Price: 361.34 PHP
Availability: InStock

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Mouser #:

512-FOD8332R2V

Mfr. #:

FOD8332R2V

Mfr.:

onsemi

Paglalarawan:

MOSFET Output Optocouplers SO16 LED 2.5A GD T&R VDE

Datasheet:

FOD8332R2V Datasheet

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

Higit Pang Impormasyon

Alamin pa ang tungkol sa onsemi FOD8332R2V

May Stock: 692

Stock:: 692 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 13 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 750)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱361.34	₱361.34
	₱271.44	₱2,714.40
	₱210.54	₱21,054.00
	₱183.28	₱91,640.00
Buo Reel (Mag-order sa multiple ng 750)
	₱180.38	₱135,285.00
4,500	Quote

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga MOSFET Output Optocoupler
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	SOIC-16
Uri ng Output:	Rail-to-Rail
Dami ng Channel:	1 Channel
Voltage ng Isolation:	4243 Vrms
If - Forward Current:	16 mA
Vf - Forward Voltage:	1.45 V
Vr - Reverse Voltage:	5 V
Pd - Power Dissipation:	600 mW
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 100 C
Series:	FOD8332
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	PH
Tagal ng Pagbagsak:	50 ns
Uri ng Produkto:	MOSFET Output Optocouplers
Tagal ng Pagtaas:	50 ns
Dami ng Pack ng Pabrika:	750
Subcategory:	Optocouplers
Timbang ng Unit:	758 mg

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Mga Piniling Attribute: 0

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Datasheet

FOD8332R2V Datasheet

Other

Potential Material Issue on SO-16 Wide Body Optocoupler Package (PDF)

PCN

CNHTS:: 8541490000
CAHTS:: 8541490020
USHTS:: 8541498000
JPHTS:: 854149000
KRHTS:: 8541409029
TARIC:: 8541490000
MXHTS:: 8541499900
BRHTS:: 85414900
ECCN:: EAR99

ON Semiconductor FOD8333 IGBT Drive Optocoupler

ON Semiconductor's FOD8333 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving medium-power IGBTs with ratings up to 1,200 V and 150 A. It is suited for fast-switching driving of power IGBTs and MOSFETs in motor-control inverter applications and high-performance power systems. The FOD8333 offers protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs. The device utilizes proprietary Optoplanar® coplanar packaging technology and optimized IC design to achieve reliable high isolation and high noise immunity, characterized by high common-mode rejection and power supply rejection specifications. The device is housed in a wide-body, 16-pin, small-outline, plastic package. The gate-driver channel consists of an aluminum gallium arsenide (AlGaAs) light-emitting diode (LED) optically coupled to an integrated high-speed driver circuit with a low-RDS(ON) MOSFET output stage. The fault-sense channel consists of an AlGaAs LED optically coupled to an integrated high-speed feedback circuit for fault sensing.
Learn More

FOD8333 Output Current IGBT Drive Optocouplers

onsemi's FOD8333 2.5A Output Current IGBT Drive Optocouplers are an advanced 2.5A output current IGBT drive optocoupler capable of driving medium-power IGBTs with ratings up to 1200V and 150A. They are suited for fast-switching driving of power IGBTs and MOSFETs in motor-control inverter applications and high-performance power systems. The onsemi FOD8333 offers protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs.