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FFSH4065BDN-F085

Name: onsemi FFSH4065BDN-F085
Brand: onsemi
SKU: 863-FFSH4065BDN-F085
Price: 771.98 PHP
Availability: InStock

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Mouser #:

863-FFSH4065BDN-F085

Mfr. #:

FFSH4065BDN-F085

Mfr.:

onsemi

Paglalarawan:

SiC Schottky Diodes 650V

Datasheet:

FFSH4065BDN-F085 Datasheet

ECAD Model:

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May Stock: 680

Stock:: 680 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 15 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱771.98	₱771.98
	₱468.06	₱4,680.60
	₱443.12	₱53,174.40

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
REACH - SVHC:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Kumpigurasyon:	Dual Anode Common Cathode
If - Forward Current:	40 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.38 V
Ifsm - Forward Surge Current:	84 A
Ir - Reverse Current:	40 uA
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	FFSH4065BDN-F085
Kuwalipikasyon:	AEC-Q101
Packaging:	Tube
Brand:	onsemi
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Pd - Power Dissipation:	127 W
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	30
Subcategory:	Diodes & Rectifiers
Pangalang pangkalakal:	EliteSiC
Vr - Reverse Voltage:	650 V

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Mga Piniling Attribute: 0

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Datasheet

FFSH4065BDN-F085 Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541590000
USHTS:: 8541100080
ECCN:: EAR99

FFSPx065BDN-F085 Automotive SiC Schottky Diodes

onsemi FFSPx065BDN-F085 Automotive Silicon Carbide (SiC) Schottky Diodes are AEC-Q101-qualified devices designed to leverage the advantages of Silicon Carbide (Si) over Silicon. The FFSPx065BDN-F085 SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also offer temperature-independent switching and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size/cost.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.