FM24V10-G

Infineon Technologies
877-FM24V10-G
FM24V10-G

Mfr.:

Paglalarawan:
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM

Datasheet:
ECAD Model:
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May Stock: 599

Stock:
599 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱1,081.70 ₱1,081.70
₱1,037.62 ₱10,376.20
₱947.72 ₱23,693.00
₱866.52 ₱43,326.00
₱644.38 ₱312,524.30
₱643.80 ₱624,486.00

Alternatibong Packaging

Mfr. # ng Piyesa:
FM24V10-GTR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
May Stock
Presyo:
₱1,138.54
Min:
1

Katulad na Produkto

Infineon Technologies FM24V10-GTR
Infineon Technologies
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM
Paghambingin ang Kasalukuyang Piyesa

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Infineon
Kategorya ng Produkto: F-RAM
RoHS:  
1 Mbit
I2C
3.4 MHz
128 k x 8
SOIC-8
2 V
3.6 V
- 40 C
+ 85 C
FM24V10-G
Tube
Brand: Infineon Technologies
Bansa ng Pag-assemble: TH
Bansa ng Diffusion: US
Bansang Pinagmulan: US
Maselan sa Moisture: Yes
Isitilo ng Mounting: SMD/SMT
Supply Voltage ng Pagpapatakbo: 3.3 V
Uri ng Produkto: FRAM
Dami ng Pack ng Pabrika: 485
Subcategory: Memory & Data Storage
Timbang ng Unit: 540 mg
Nahanap na mga produkto:
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Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.
Mga Piniling Attribute: 0

Datasheet

CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8542320299
ECCN:
EAR99

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

Serial FRAM Nonvolatile Memory Devices

Infineon Technologies Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Infineon Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. This eliminates the need for wear leveling to support a product over its lifespan. 

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