FM28V020-SGTR

Infineon Technologies
877-FM28V020-SGTR
FM28V020-SGTR

Mfr.:

Paglalarawan:
F-RAM 256K (32Kx8) 60ns F-RAM

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 1,941

Stock:
1,941 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
Packaging:
Buo Reel (Mag-order sa multiple ng 1000)

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Cut Tape / MouseReel™
₱876.96 ₱876.96
₱813.74 ₱8,137.40
₱788.80 ₱19,720.00
₱769.66 ₱38,483.00
₱750.52 ₱75,052.00
₱740.66 ₱185,165.00
₱722.10 ₱361,050.00
Buo Reel (Mag-order sa multiple ng 1000)
₱701.80 ₱701,800.00
2,000 Quote
† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™

Alternatibong Packaging

Mfr. # ng Piyesa:
Packaging:
Tube
Availability:
May Stock
Presyo:
₱874.06
Min:
1

Katulad na Produkto

Infineon Technologies FM28V020-SG
Infineon Technologies
F-RAM 256K (32Kx8) 60ns F-RAM

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Infineon
Kategorya ng Produkto: F-RAM
RoHS:  
256 kbit
Parallel
32 k x 8
SOIC-28
60 ns
2 V
3.6 V
- 40 C
+ 85 C
FM28V020-SG
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Bansa ng Pag-assemble: TH
Bansa ng Diffusion: US
Bansang Pinagmulan: US
Maselan sa Moisture: Yes
Isitilo ng Mounting: SMD/SMT
Supply Voltage ng Pagpapatakbo: 3.3 V
Uri ng Produkto: FRAM
Dami ng Pack ng Pabrika: 1000
Subcategory: Memory & Data Storage
Timbang ng Unit: 2.215 g
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Mga Piniling Attribute: 0

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CNHTS:
8542319090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8542320299
ECCN:
EAR99

Parallel F-RAM Non-Volatile Memory

Infineon Technologies Parallel F-RAM Non-Volatile Memory operates similarly to other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.