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IAUCN08S7N019TATMA1

Name: Infineon IAUCN08S7N019TATMA1
Brand: Infineon Technologies
SKU: 726-IAUCN08S7N019TAT
Price: 241.28 PHP
Availability: InStock

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Mouser #:

726-IAUCN08S7N019TAT

Mfr. #:

IAUCN08S7N019TATMA1

Mfr.:

Infineon Technologies

Paglalarawan:

MOSFETs 80 V, N-Ch, 1.94 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7

Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

IAUCN08S7N019TATMA1 Datasheet (PDF)

ECAD Model:

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May Stock: 5,834

Stock:: 5,834 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 26 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱241.28	₱241.28
	₱158.92	₱1,589.20
	₱111.36	₱11,136.00
	₱96.28	₱48,140.00
	₱92.80	₱92,800.00
Buo Reel (Mag-order sa multiple ng 2000)
	₱89.32	₱178,640.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	PG-LHDSO-10-2
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	223 A
Rds On - Drain-Source Resistance:	1.94 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	68 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	180 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	AT
Tagal ng Pagbagsak:	17 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	16 ns
Series:	OptiMOS 7
Dami ng Pack ng Pabrika:	2000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	27 ns
Karaniwang Tagal ng Delay ng Pag-on:	14 ns
Mga Alias ng # ng Piyesa :	IAUCN08S7N019T SP005981924

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Mga Piniling Attribute: 0

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Datasheet

IAUCN08S7N019TATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 7 Automotive Power MOSFETs

Infineon Technologies is introducing its leading OptiMOS™ 7 Automotive Power MOSFETs technology with remarkably low on-state resistance, reduced switching losses, and enhanced ruggedness. OptiMOS 7 redefines the landscape of automotive power MOSFETs. The OptiMOS 7 MOSFET technology from Infineon establishes a new standard for automotive applications, allowing performance and efficiency while addressing the challenges of tomorrow's automotive systems.

Mga OptiMOS™ 7 80V Automotive Power MOSFET

Infineon Technologies OptiMOS™ 7 80V Automotive Power MOSFETs are built with Infineon’s leading-edge, power semiconductor technology. These MOSFETs are designed specifically for the high performance, quality, and robustness needed for demanding automotive applications. The OptiMOS™ 7 80V MOSFETs operate with a ±20V_GS gate source voltage and a temperature range of -55°C to 175°C. These MOSFETs are offered in top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps users achieve advancements in cooling and power density. The 80V power MOSFETs are MSL-1 rated, RoHS compliant, and 100% avalanche tested. These power MOSFETs are ideal for general automotive applications.