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IAUCN08S7N045TATMA1

Name: Infineon IAUCN08S7N045TATMA1
Brand: Infineon Technologies
SKU: 726-IAUCN08S7N045TAT
Price: 165.3 PHP
Availability: InStock

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Mouser #:

726-IAUCN08S7N045TAT

Mfr. #:

IAUCN08S7N045TATMA1

Mfr.:

Infineon Technologies

Paglalarawan:

MOSFETs 80 V, N-Ch, 4.54 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7

Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

IAUCN08S7N045TATMA1 Datasheet (PDF)

ECAD Model:

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May Stock: 5,524

Stock:: 5,524 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 26 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱165.30	₱165.30
	₱106.72	₱1,067.20
	₱74.24	₱7,424.00
	₱60.32	₱30,160.00
	₱55.62	₱55,620.00
Buo Reel (Mag-order sa multiple ng 2000)
	₱52.37	₱104,740.00
	₱51.27	₱205,080.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	PG-LHDSO-10-1
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	103 A
Rds On - Drain-Source Resistance:	4.54 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	27 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	98 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	AT
Tagal ng Pagbagsak:	9 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	9 ns
Series:	OptiMOS 7
Dami ng Pack ng Pabrika:	2000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	12 ns
Karaniwang Tagal ng Delay ng Pag-on:	7 ns
Mga Alias ng # ng Piyesa :	IAUCN08S7N045T SP005911511

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Mga Piniling Attribute: 0

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Datasheet

IAUCN08S7N045TATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 7 Automotive Power MOSFETs

Infineon Technologies is introducing its leading OptiMOS™ 7 Automotive Power MOSFETs technology with remarkably low on-state resistance, reduced switching losses, and enhanced ruggedness. OptiMOS 7 redefines the landscape of automotive power MOSFETs. The OptiMOS 7 MOSFET technology from Infineon establishes a new standard for automotive applications, allowing performance and efficiency while addressing the challenges of tomorrow's automotive systems.

Mga OptiMOS™ 7 80V Automotive Power MOSFET

Infineon Technologies OptiMOS™ 7 80V Automotive Power MOSFETs are built with Infineon’s leading-edge, power semiconductor technology. These MOSFETs are designed specifically for the high performance, quality, and robustness needed for demanding automotive applications. The OptiMOS™ 7 80V MOSFETs operate with a ±20V_GS gate source voltage and a temperature range of -55°C to 175°C. These MOSFETs are offered in top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps users achieve advancements in cooling and power density. The 80V power MOSFETs are MSL-1 rated, RoHS compliant, and 100% avalanche tested. These power MOSFETs are ideal for general automotive applications.