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IDW40G65C5BXKSA2

Name: Infineon IDW40G65C5BXKSA2
Brand: Infineon Technologies
SKU: 726-IDW40G65C5BXKSA2
Price: 877.54 PHP
Availability: InStock

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Mouser #:

726-IDW40G65C5BXKSA2

Mfr. #:

IDW40G65C5BXKSA2

Mfr.:

Infineon Technologies

Paglalarawan:

SiC Schottky Diodes SIC DIODES

Datasheet:

IDW40G65C5BXKSA2 Datasheet (PDF)

ECAD Model:

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May Stock: 230

Stock:: 230 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 8 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱877.54	₱877.54
	₱482.56	₱4,825.60
	₱448.92	₱44,892.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Kumpigurasyon:	Single
If - Forward Current:	40 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	182 A
Ir - Reverse Current:	2.2 uA
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	XDW40G65
Packaging:	Tube
Brand:	Infineon Technologies
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	AT
Pd - Power Dissipation:	183 W
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	240
Subcategory:	Diodes & Rectifiers
Pangalang pangkalakal:	CoolSiC
Vr - Reverse Voltage:	650 V
Mga Alias ng # ng Piyesa :	IDW40G65C5B SP001633192
Timbang ng Unit:	6 g

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Mga Piniling Attribute: 0

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Technical Resources

Test/Quality Data

MCDS_2015-08-14_04-13-51_MA001225322_PG-TO247-3-41.pdf (PDF)

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CNHTS:: 8541590000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Q_c x V_f).

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.