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IKW08N120CS7XKSA1

Name: Infineon IKW08N120CS7XKSA1
Brand: Infineon Technologies
SKU: 726-IKW08N120CS7XKSA
Price: 234.9 PHP
Availability: InStock

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Mouser #:

726-IKW08N120CS7XKSA

Mfr. #:

IKW08N120CS7XKSA1

Mfr.:

Infineon Technologies

Paglalarawan:

IGBTs 1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package

Datasheet:

IKW08N120CS7XKSA1 Datasheet (PDF)

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May Stock: 230

Stock:: 230 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

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Presyo ng Unit:

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Ext. Presyo:

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Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱234.90	₱234.90
	₱129.34	₱1,293.40
	₱114.26	₱11,426.00
	₱91.06	₱43,708.80

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga IGBT
Teknolohiya:	Si
Package / Case:	TO-247-3
Isitilo ng Mounting:	Through Hole
Kumpigurasyon:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.65 V
Maximum na Gate Emitter Voltage:	- 20 V, 20 V
Tuloy-tuloy na Collector Current sa 25 C:	21 A
Pd - Power Dissipation:	106 W
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 175 C
Series:	IGBT7 S7
Packaging:	Tube
Brand:	Infineon Technologies
Bansa ng Pag-assemble:	CN
Bansa ng Diffusion:	DE
Bansang Pinagmulan:	DE
Gate-Emitter Leakage Current:	100 nA
Uri ng Produkto:	IGBT Transistors
Dami ng Pack ng Pabrika:	240
Subcategory:	IGBTs
Pangalang pangkalakal:	TRENCHSTOP
Mga Alias ng # ng Piyesa :	IKW08N120CS7 SP005419704

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Datasheet

IKW08N120CS7XKSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

1200V Gen8 IGBTs

Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to +175°C.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

TRENCHSTOP™ IGBT7 Discretes & Modules

Infineon Technologies TRENCHSTOP™ IGBT7 Discretes and Modules are designed for variable-speed drives. If only half of all industrial drives had electric speed control, 20% of energy or 17 million tons of CO2 could be saved. Infineon facilitates this switch with the TRENCHSTOP IGBT7 technology.

TRENCHSTOP™ IGBT7 S7

Infineon Technologies TRENCHSTOP™ IGBT7 S7 offers an extensive 1200V portfolio for all industrial applications requiring short circuit capability/ruggedness. The IGBT7 S7 is an efficient short-circuit rugged discrete IGBT providing at least 10% lower saturation voltage than others.