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IKW75N120CH7XKSA1

Name: Infineon IKW75N120CH7XKSA1
Brand: Infineon Technologies
SKU: 726-IKW75N120CH7XKSA
Price: 428.62 PHP
Availability: InStock

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Mouser #:

726-IKW75N120CH7XKSA

Mfr. #:

IKW75N120CH7XKSA1

Mfr.:

Infineon Technologies

Paglalarawan:

IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package

Datasheet:

IKW75N120CH7XKSA1 Datasheet (PDF)

ECAD Model:

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May Stock: 834

Stock:: 834 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 26 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱428.62	₱428.62
	₱313.20	₱3,132.00
	₱245.34	₱24,534.00
	₱243.60	₱116,928.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga IGBT
RoHS:
Series:	IGBT7 H7
Packaging:	Tube
Brand:	Infineon Technologies
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	DE
Uri ng Produkto:	IGBT Transistors
Dami ng Pack ng Pabrika:	240
Subcategory:	IGBTs
Pangalang pangkalakal:	TRENCHSTOP
Mga Alias ng # ng Piyesa :	IKW75N120CH7 SP005578265

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Datasheet

IKW75N120CH7XKSA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V TRENCHSTOP IGBT7 H7 Discrete Transistors

Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors are the 7^th generation of 1200V TRENCHSTOP™ IGBTs, which are designed with micro-pattern trench technology. These discrete IGBTs offer a high level of controllability, low conduction losses, low switching losses, improved EMI performance, and humidity robustness under harsh environments. The IGBT7 H7 discrete transistors allow the selection of a low gate resistor (down to 5Ω) while maintaining excellent switching behavior. These transistors are used in fast EV charging, industrial heating and welding, and Uninterruptible Power Supplies (UPS) applications.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.