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IKY140N120CH7XKSA1

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Mouser #:

726-IKY140N120CH7XKS

Mfr. #:

IKY140N120CH7XKSA1

Mfr.:

Infineon Technologies

Paglalarawan:

IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package

Datasheet:

IKY140N120CH7XKSA1 Datasheet (PDF)

ECAD Model:

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Restriksyon sa Paghahatid:

Kasalukuyang hindi ibinebenta ng Mouser ang produktong ito sa inyong rehiyon.

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga IGBT
Restriksyon sa Paghahatid:	Kasalukuyang hindi ibinebenta ng Mouser ang produktong ito sa inyong rehiyon.
RoHS:
Maximum na Gate Emitter Voltage:	- 20 V, 20 V
Series:	IGBT7 H7
Packaging:	Tube
Brand:	Infineon Technologies
Bansa ng Pag-assemble:	CN
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	DE
Uri ng Produkto:	IGBT Transistors
Dami ng Pack ng Pabrika:	240
Subcategory:	IGBTs
Pangalang pangkalakal:	TRENCHSTOP
Mga Alias ng # ng Piyesa :	IKY140N120CH7 SP005560949

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Datasheet

IKY140N120CH7XKSA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

1200V TRENCHSTOP IGBT7 H7 Discrete Transistors

Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors are the 7^th generation of 1200V TRENCHSTOP™ IGBTs, which are designed with micro-pattern trench technology. These discrete IGBTs offer a high level of controllability, low conduction losses, low switching losses, improved EMI performance, and humidity robustness under harsh environments. The IGBT7 H7 discrete transistors allow the selection of a low gate resistor (down to 5Ω) while maintaining excellent switching behavior. These transistors are used in fast EV charging, industrial heating and welding, and Uninterruptible Power Supplies (UPS) applications.