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IMZA65R039M1HXKSA1

Name: Infineon IMZA65R039M1HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZA65R039M1HXKS
Price: 546.94 PHP
Availability: InStock

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Mouser #:

726-IMZA65R039M1HXKS

Mfr. #:

IMZA65R039M1HXKSA1

Mfr.:

Infineon Technologies

Paglalarawan:

SiC MOSFETs SILICON CARBIDE MOSFET

Datasheet:

IMZA65R039M1HXKSA1 Datasheet (PDF)

ECAD Model:

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May Stock: 360

Stock:: 360 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 8 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

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Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱546.94	₱546.94
	₱331.18	₱3,311.80
	₱309.14	₱30,914.00
	₱302.76	₱145,324.80

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.7 V
Qg - Gate Charge:	41 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	176 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Packaging:	Tube
Uri ng Produkto:	SiC MOSFETS
Dami ng Pack ng Pabrika:	240
Subcategory:	Transistors
Teknolohiya:	SiC
Mga Alias ng # ng Piyesa :	IMZA65R039M1H SP005423796

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Datasheet

IMZA65R039M1HXKSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.