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IXXK100N60C3H1

Name: IXYS IXXK100N60C3H1
Brand: IXYS
SKU: 747-IXXK100N60C3H1
Price: 1413.46 PHP
Availability: InStock

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Mouser #:

747-IXXK100N60C3H1

Mfr. #:

IXXK100N60C3H1

Mfr.:

IXYS

Paglalarawan:

IGBTs XPT IGBT C3-Class 600V/170Amp CoPacked

Datasheet:

IXXK100N60C3H1 Datasheet

ECAD Model:

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May Stock: 157

Stock:: 157 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 31 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ang mga dami na higit pa sa 157 ay sasailalim sa minimum na mga kinakailangan sa pag-order.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,413.46	₱1,413.46
	₱1,008.04	₱10,080.40

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	IXYS
Kategorya ng Produkto:	Mga IGBT
RoHS:
Teknolohiya:	Si
Package / Case:	TO-264
Isitilo ng Mounting:	Through Hole
Kumpigurasyon:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.2 V
Maximum na Gate Emitter Voltage:	- 20 V, 20 V
Tuloy-tuloy na Collector Current sa 25 C:	170 A
Pd - Power Dissipation:	695 W
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Series:	IXXK100N60
Packaging:	Tube
Brand:	IXYS
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	PH
Gate-Emitter Leakage Current:	100 nA
Uri ng Produkto:	IGBT Transistors
Dami ng Pack ng Pabrika:	25
Subcategory:	IGBTs
Pangalang pangkalakal:	XPT
Timbang ng Unit:	10 g

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Datasheet

IXXK100N60C3H1 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Discrete 600V XPT IGBTs

IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values.

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