MBR10H150PC_R2_00701

Panjit
241-MBR10H150PCR2701
MBR10H150PC_R2_00701

Mfr.:

Paglalarawan:
Schottky Diodes & Rectifiers 150V, Schottky, TO-277C, 10A

ECAD Model:
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May Stock: 6,300

Stock:
6,300 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
10 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱55.68 ₱55.68
₱37.12 ₱371.20
₱27.14 ₱2,714.00
₱21.05 ₱10,525.00
₱17.40 ₱17,400.00
Buo Reel (Mag-order sa multiple ng 5000)
₱15.95 ₱79,750.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Panjit
Kategorya ng Produkto: Schottky Mga Diode at Rectifier
RoHS:  
Schottky Rectifiers
SMD/SMT
TO-277-3
Si
10 A
150 V
750 mV
250 A
- 55 C
+ 175 C
Reel
Cut Tape
Brand: Panjit
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: TW
Range ng Temperatura sa Pagpapatakbo: - 55 C to + 175 C
Uri ng Produkto: Schottky Diodes & Rectifiers
Dami ng Pack ng Pabrika: 5000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 150 V
Timbang ng Unit: 110 mg
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Mga Piniling Attribute: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

H-Type Ultra-Low Schottky Diodes & Rectifiers

PANJIT H-Type Ultra-Low Schottky Diodes and Rectifiers are high-efficiency surface mount ultra-low IR Schottky barrier rectifiers. These rectifiers feature low leakage current, low power loss, and high surge current capability. The H-type ultra-low Schottky diodes are lead-free in compliance with EU RoHS 2.0 and AEC-Q101 qualified in a TO-277C package case. These diodes are ideal for automated placement.

MBR10H TO-277C Schottky Barrier Rectifiers

PANJIT MBR10H TO-277C Schottky Barrier Rectifiers are surface mount (SMD) H-type Schottky devices with ultra-low insulation resistance (IR). These devices perform admirably in high-temperature environments. The PANJIT MBR10H TO-277C Schottky Barrier Rectifiers provide low leakage currents during high-temperature operation by using a planar Pt barrier wafer. These devices also offer fast switching speeds and a low forward voltage drop.