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NTTFS3D7N06HLTWG

Name: onsemi NTTFS3D7N06HLTWG
Brand: onsemi
SKU: 863-NTTFS3D7N06HLTWG
Price: 158.92 PHP
Availability: InStock

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Mouser #:

863-NTTFS3D7N06HLTWG

Mfr. #:

NTTFS3D7N06HLTWG

Mfr.:

onsemi

Paglalarawan:

MOSFETs T8 60V DFN POWER CLIP 3X3

Datasheet:

NTTFS3D7N06HLTWG Datasheet

ECAD Model:

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May Stock: 1,390

Stock:: 1,390 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 43 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Matagal na lead time na iniulat sa produktong ito.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱158.92	₱158.92
	₱102.66	₱1,026.60
	₱70.76	₱7,076.00
	₱57.36	₱28,680.00
Buo Reel (Mag-order sa multiple ng 3000)
	₱46.86	₱140,580.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	PQFN-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	103 A
Rds On - Drain-Source Resistance:	3.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	32.7 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	PH
Uri ng Produkto:	MOSFETs
Series:	NTTFS3D7N06HL
Dami ng Pack ng Pabrika:	3000
Subcategory:	Transistors
Timbang ng Unit:	122.136 mg

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Mga Piniling Attribute: 0

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Datasheet

NTTFS3D7N06HLTWG Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

NTTFSxD1N0xHL N-Channel PowerTrench® MOSFETs

onsemi NTTFSxD1N0xHL N-Channel PowerTrench® MOSFETs employ high-performance Shielded Gate MOSFET technology for extremely low R_DS(on). These onsemi single-channel MOSFETs offer low switching noises/EMI and 100% UIL-tested MSL1 robust package design. The NTTFSxD1N0xHL MOSFETs are available in a lead-free, halogen-free/BFR-free, and RoHS compliant WDFN8 package. Typical applications include DC−DC buck converters, point of load, high-efficiency load switch and low-side switching, ORing FETs, DC-DC power supplies, and MV synchronous buck converters.