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NVH4L022N120M3S

Name: onsemi NVH4L022N120M3S
Brand: onsemi
SKU: 863-NVH4L022N120M3S
Price: 1843.24 PHP
Availability: InStock

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Mouser #:

863-NVH4L022N120M3S

Mfr. #:

NVH4L022N120M3S

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs SIC MOS TO247-4L 22MOHM 1200V

Datasheet:

NVH4L022N120M3S Datasheet

ECAD Model:

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May Stock: 267

Stock:: 267 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Matagal na lead time na iniulat sa produktong ito.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,843.24	₱1,843.24
	₱1,422.74	₱14,227.40
	₱1,422.16	₱170,659.20
510	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
REACH - SVHC:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	68 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	151 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	352 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	EliteSiC
Brand:	onsemi
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Tagal ng Pagbagsak:	13 ns
Forward Transconductance - Min:	34 S
Packaging:	Tube
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	24 ns
Series:	NVH4L022N120M3S
Dami ng Pack ng Pabrika:	30
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	48 ns
Karaniwang Tagal ng Delay ng Pag-on:	18 ns

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Mga Piniling Attribute: 0

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Datasheet

NVH4L022N120M3S Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NVH4L022N120M3S Silicon Carbide (SiC) MOSFETs

ON Semiconductor NVH4L022N120M3S Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The ON Semiconductor NVH4L022N120M3S features low ON resistance and a compact chip size that ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

M3S 1200V Silicon Carbide (SiC) MOSFETs

onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs are optimized for fast switching applications. The planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. The onsemi M3S 1200V MOSFETs provide optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The M3S offers low switching losses and is housed in a TO247-4LD package for low common source inductance.

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.