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SCS206AGC17

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Mouser #:

755-SCS206AGC17

Mfr. #:

SCS206AGC17

Mfr.:

ROHM Semiconductor

Paglalarawan:

SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen

Lifecycle:

NRND:

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Datasheet:

SCS206AGC17 Datasheet (PDF)

ECAD Model:

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220ACG-2
Kumpigurasyon:	Single
If - Forward Current:	6 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.55 V
Ifsm - Forward Surge Current:	23 A
Ir - Reverse Current:	120 uA
Maximum na Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Pd - Power Dissipation:	51 W
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	1000
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Mga Alias ng # ng Piyesa :	SCS206AG

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Mga Piniling Attribute: 0

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Datasheet

SCS206AGC17 Datasheet (PDF)

Specification Sheets

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USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (Q_C), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.