SCS210KGC17

ROHM Semiconductor
755-SCS210KGC17
SCS210KGC17

Mfr.:

Paglalarawan:
SiC Schottky Diodes RECT 1.2KV 10A RDL SIC SKY

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 687

Stock:
687 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
21 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱545.20 ₱545.20
₱301.02 ₱3,010.20
₱281.30 ₱28,130.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
ROHM Semiconductor
Kategorya ng Produkto: Mga SiC Schottky Diode
RoHS:  
Through Hole
TO-220ACG-2
Single
10 A
1.2 kV
1.6 V
42 A
200 uA
+ 175 C
Tube
Brand: ROHM Semiconductor
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: CN
Pd - Power Dissipation: 150 W
Uri ng Produkto: SiC Schottky Diodes
Dami ng Pack ng Pabrika: 1000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Mga Alias ng # ng Piyesa : SCS210KG
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CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.