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SCS220KE2HRC11

Name: ROHM Semiconductor SCS220KE2HRC11
Brand: ROHM Semiconductor
SKU: 755-SCS220KE2HRC11
Price: 835.78 PHP
Availability: InStock

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Mouser #:

755-SCS220KE2HRC11

Mfr. #:

SCS220KE2HRC11

Mfr.:

ROHM Semiconductor

Paglalarawan:

SiC Schottky Diodes AECQ

Datasheet:

SCS220KE2HRC11 Datasheet (PDF)

ECAD Model:

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May Stock: 442

Stock:: 442

Maaaring Ipadala Agad

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Inoorder:: 450
Lead-Time ng Pabrika:: 21

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Ipasok ang Dami:

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Presyo ng Unit:

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Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱835.78	₱835.78
	₱701.80	₱7,018.00
	₱560.86	₱56,086.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247N-3
Kumpigurasyon:	Dual
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.6 V
Ifsm - Forward Surge Current:	84 A
Ir - Reverse Current:	200 uA
Maximum na Operating Temperature:	+ 175 C
Kuwalipikasyon:	AEC-Q101
Packaging:	Tube
Brand:	ROHM Semiconductor
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	TH
Pd - Power Dissipation:	270 W
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	450
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV
Mga Alias ng # ng Piyesa :	SCS220KE2HR

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Mga Piniling Attribute: 0

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Datasheet

SCS220KE2HRC11 Datasheet (PDF)

Specification Sheets

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CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

AEC-Q101 SiC Schottky Barrier Diodes

ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes deliver breakdown voltages from 600V, far exceeding the upper limit for silicon SBDs. The AEC-Q101 Diodes utilize SiC, making them ideal for PFC circuits and inverters. Additionally, high-speed switching is enabled with ultra-small reverse recovery time. This minimizes both reverse recovery charge and switching loss, contributing to end-product miniaturization. ROHM AEC-Q101 SiC Schottky Barrier Diodes offer a reverse voltage range of 650V to 1200V, a continuous forward current range of 1.2µA to 260µA, and a total power dissipation range between 48W to 280W. The devices are available in TO-247 and TO-263 packages, with a max temperature of +175°C.