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SCT020W120G3-4AG

Name: STMicroelectronics SCT020W120G3-4AG
Brand: STMicroelectronics
SKU: 511-SCT020W120G3-4AG
Price: 1096.2 PHP
Availability: InStock

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Mouser #:

511-SCT020W120G3-4AG

Mfr. #:

SCT020W120G3-4AG

Mfr.:

STMicroelectronics

Paglalarawan:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

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Datasheet:

SCT020W120G3-4AG Datasheet (PDF)

ECAD Model:

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May Stock: 488

Stock:: 488 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 22 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,096.20	₱1,096.20
	₱697.16	₱6,971.60

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	Hip247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	121 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 200 C
Pd - Power Dissipation:	541 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Tagal ng Pagbagsak:	22 ns
Packaging:	Tube
Produkto:	SiC MOSFETS
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	9 ns
Dami ng Pack ng Pabrika:	600
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	47 ns
Karaniwang Tagal ng Delay ng Pag-on:	21 ns

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Datasheet

SCT020W120G3-4AG Datasheet (PDF)

PCN

Product Change Notification 2025-5-3 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

Mga Automotive-Grade Silicon Carbide Power MOSFET

Ang mga STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFET ay na-develop gamit ang advanced at makabagong 2nd/3rd generation SiC MOSFET technology. Nagtatampok ang mga device ng mababang on-resistance kada unit area at napakahusay na switching performance. Ang mga MOSFET ay nagtatampok ng napakataas na operating temperature capability (TJ = 200°C), at napakabilis at napakatibay na intrinsic body diode.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.