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SCT4045DRHRC15

Name: ROHM Semiconductor SCT4045DRHRC15
Brand: ROHM Semiconductor
SKU: 755-SCT4045DRHRC15
Price: 654.82 PHP
Availability: InStock

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Mouser #:

755-SCT4045DRHRC15

Mfr. #:

SCT4045DRHRC15

Mfr.:

ROHM Semiconductor

Paglalarawan:

SiC MOSFETs TO247 750V 34A N-CH SIC

Datasheet:

SCT4045DRHRC15 Datasheet

ECAD Model:

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May Stock: 321

Stock:: 321 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 27 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ang mga dami na higit pa sa 321 ay sasailalim sa minimum na mga kinakailangan sa pag-order.

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Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

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Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱654.82	₱654.82
	₱455.30	₱4,553.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	59 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	63 nC
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	TH
Tagal ng Pagbagsak:	10 ns
Forward Transconductance - Min:	9.3 S
Packaging:	Tube
Produkto:	MOSFET's
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	16 ns
Dami ng Pack ng Pabrika:	450
Subcategory:	Transistors
Teknolohiya:	SiC
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	27 ns
Karaniwang Tagal ng Delay ng Pag-on:	5.1 ns
Mga Alias ng # ng Piyesa :	SCT4045DRHR

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Datasheet

SCT4045DRHRC15 Datasheet

Specification Sheets

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.