SI8487DB-T1-E1

Vishay Semiconductors
78-SI8487DB-T1-E1
SI8487DB-T1-E1

Mfr.:

Paglalarawan:
MOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 8,604

Stock:
8,604
Maaaring Ipadala Agad
Inoorder:
3,000
Lead-Time ng Pabrika:
4
(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
Packaging:
Buo Reel (Mag-order sa multiple ng 3000)

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Cut Tape / MouseReel™
₱67.28 ₱67.28
₱42.11 ₱421.10
₱27.67 ₱2,767.00
₱21.46 ₱10,730.00
₱19.49 ₱19,490.00
Buo Reel (Mag-order sa multiple ng 3000)
₱16.88 ₱50,640.00
† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Vishay
Kategorya ng Produkto: Mga MOSFET
RoHS:  
Si
SMD/SMT
MicroFoot-4
P-Channel
1 Channel
30 V
7.7 A
25 mOhms
- 12 V, 12 V
1.2 V
80 nC
- 55 C
+ 150 C
2.7 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Kumpigurasyon: Single
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: DE
Tagal ng Pagbagsak: 60 ns
Forward Transconductance - Min: 16 S
Uri ng Produkto: MOSFETs
Tagal ng Pagtaas: 22 ns
Series: SI8
Dami ng Pack ng Pabrika: 3000
Subcategory: Transistors
Uri ng Transistor: 1 P-Channel
Karaniwang Tagal ng Delay ng Pag-off: 195 ns
Karaniwang Tagal ng Delay ng Pag-on: 25 ns
Mga Alias ng # ng Piyesa : SI8487DB-E1
Timbang ng Unit: 45.104 mg
Nahanap na mga produkto:
Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang
Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.
Mga Piniling Attribute: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs

Vishay Siliconix's Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs set new benchmarks for size and on-resistance. The new Si8497DB is the industry's first 30V chipscale MOSFET in the compact 1 mm by 1.5 mm size, making it the smallest such device on the market, while the Si8487DB provides the lowest on-resistance available for a 30V chipscale device in the 1.6 mm by 1.6 mm form factor. Vishay's TrenchFET Gen III P-channel technology uses advanced process techniques to pack one billion transistor cells into each square inch of silicon. The Si8497DB and Si8487DB will be used for load, battery, and charger switching in handheld devices including smart phones, tablets, point-of-sale (POS) devices, and mobile computing.

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.