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SI8817DB-T2-E1

Name: Vishay SI8817DB-T2-E1
Brand: Vishay Semiconductors
SKU: 78-SI8817DB-T2-E1
Price: 42.34 PHP
Availability: InStock

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Mouser #:

78-SI8817DB-T2-E1

Mfr. #:

SI8817DB-T2-E1

Mfr.:

Vishay Semiconductors

Paglalarawan:

MOSFETs -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

Datasheet:

SI8817DB-T2-E1 Datasheet

ECAD Model:

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Higit Pang Impormasyon

Alamin pa ang tungkol sa Vishay Semiconductors SI8817DB-T2-E1

May Stock: 38,148

Stock:: 38,148 Maaaring Ipadala Agad

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Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 3000)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱42.34	₱42.34
	₱26.10	₱261.00
	₱16.82	₱1,682.00
	₱12.82	₱6,410.00
	₱11.48	₱11,480.00
Buo Reel (Mag-order sa multiple ng 3000)
	₱11.43	₱34,290.00
	₱10.15	₱60,900.00
	₱9.45	₱85,050.00
	₱8.53	₱204,720.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Vishay
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	MicroFoot-4
Polarity ng Transistor:	P-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.9 A
Rds On - Drain-Source Resistance:	61 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	19 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 mW
Channel Mode:	Enhancement
Pangalang pangkalakal:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	US
Tagal ng Pagbagsak:	22 ns
Forward Transconductance - Min:	5 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	20 ns
Series:	SI8
Dami ng Pack ng Pabrika:	3000
Subcategory:	Transistors
Uri ng Transistor:	1 P-Channel
Karaniwang Tagal ng Delay ng Pag-off:	52 ns
Karaniwang Tagal ng Delay ng Pag-on:	20 ns
Timbang ng Unit:	45.104 mg

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Mga Piniling Attribute: 0

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Datasheet

SI8817DB-T2-E1 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541210000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R_DS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.