TGF2023-2-01

Qorvo
772-TGF2023-2-01
TGF2023-2-01

Mfr.:

Paglalarawan:
GaN FETs DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB

Lifecycle:
NRND:
Hindi inirerekomenda para sa mga bagong disenyo.
Datasheet:
ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.
Higit Pang Impormasyon
Alamin pa ang tungkol sa Qorvo TGF2023-2-01

Availability

Stock:
0

Mabibili mo pa rin ang produktong ito para sa backorder.

Lead-Time ng Pabrika:
16 (na) Linggo Tinatayang oras ng paggawa sa pabrika.
Minimum: 50   Mga Multiple: 50
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱2,501.54 ₱125,077.00
₱2,345.52 ₱234,552.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Qorvo
Kategorya ng Produkto: GaN FETs
RoHS:  
Die
N-Channel
Brand: Qorvo
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: US
Gain: 18 dB
Maximum na Operating Frequency: 18 GHz
Minimum na Operating Frequency: 0 Hz
Output Power: 6 W
Packaging: Gel Pack
Produkto: RF JFET Transistors
Uri ng Produkto: GaN FETs
Series: TGF2023
Dami ng Pack ng Pabrika: 50
Subcategory: Transistors
Teknolohiya: GaN-on-SiC
Uri ng Transistor: GaN HEMT
Uri: GaN SiC HEMT
Mga Alias ng # ng Piyesa : 1099624
Timbang ng Unit: 739.600 mg
Nahanap na mga produkto:
Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang
Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.
Mga Piniling Attribute: 0 

                        
Qorvo Die products:

Mouser is not authorized to break pack on these products.

Please contact your Mouser Technical Representative for further
information.



5-0810-13

Datasheet

Kailangang i-enable ang JavaScript para gumana ito.

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541290065
JPHTS:
8541210101
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
EAR99

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

TGF2023 GaN HEMT Transistors

Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

May di-inaasahang error na nangyari.


May tanong ka? Bisitahin ang Help Center.
Para sa mga tanong sa isang partikular na order, mag-log in sa account mo.

Kung may maranasan kang iba pang problema, kontakin kami sa 800-346-6873 o mag-email sa help@mouser.com.