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TGF2023-2-02

Name: Qorvo TGF2023-2-02
Brand: Qorvo
SKU: 772-TGF2023-2-02
Price: 2983.52 PHP
Availability: OutOfStock

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Mouser #:

772-TGF2023-2-02

Mfr. #:

TGF2023-2-02

Mfr.:

Qorvo

Paglalarawan:

GaN FETs DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB

Datasheet:

TGF2023-2-02 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Hindi Naka-stock

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Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika.

Ipasok ang Dami:

Minimum: 100 Mga Multiple: 100

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱2,983.52	₱298,352.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Qorvo
Kategorya ng Produkto:	GaN FETs
RoHS:
Package / Case:	Die
Polarity ng Transistor:	N-Channel
Brand:	Qorvo
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	US
Gain:	21 dB
Maximum na Operating Frequency:	18 GHz
Minimum na Operating Frequency:	0 Hz
Output Power:	12 W
Packaging:	Gel Pack
Produkto:	RF JFET Transistors
Uri ng Produkto:	GaN FETs
Series:	TGF2023
Dami ng Pack ng Pabrika:	100
Subcategory:	Transistors
Teknolohiya:	GaN-on-SiC
Uri ng Transistor:	GaN HEMT
Uri:	GaN SiC HEMT
Mga Alias ng # ng Piyesa :	TGF2023 1099622
Timbang ng Unit:	230.250 mg

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Mga Piniling Attribute: 0

                        
Qorvo Die products:

Mouser is not authorized to break pack on these products.

Please contact your Mouser Technical Representative for further
information.



5-0810-13

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Datasheet

TGF2023-2-02 Datasheet (PDF)

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CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541290065
JPHTS:: 8541210101
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

TGF2023 GaN HEMT Transistors

Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.