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UF3C120080B7S

Name: onsemi UF3C120080B7S
Brand: onsemi
SKU: 431-UF3C120080B7S
Price: 1042.26 PHP
Availability: InStock

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Mouser #:

431-UF3C120080B7S

Mfr. #:

UF3C120080B7S

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs 1200V/80MOSICFETG3TO263-7

Datasheet:

UF3C120080B7S Datasheet

ECAD Model:

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May Stock: 722

Stock:: 722 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 22 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Matagal na lead time na iniulat sa produktong ito.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,042.26	₱1,042.26
	₱741.82	₱7,418.20
	₱699.48	₱69,948.00
	₱693.68	₱346,840.00
Buo Reel (Mag-order sa multiple ng 800)
	₱653.08	₱522,464.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	D2PAK-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	28.8 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	23 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	SiC FET
Brand:	onsemi
Pagsunod:	Done
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Tagal ng Pagbagsak:	9 ns, 8 ns
Maselan sa Moisture:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	7 ns, 6 ns
Series:	UF3C
Dami ng Pack ng Pabrika:	800
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	30 ns
Karaniwang Tagal ng Delay ng Pag-on:	31 ns, 33 ns

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Mga Piniling Attribute: 0

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Datasheet

UF3C120080B7S Datasheet

PCN

Product Change Notification (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.