ROHM Semiconductor Pinakabagong Mga Transistor
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ROHM Semiconductor Small Signal Dual Channel MOSFETs
06/30/2025
06/30/2025
Feature low on-resistance and fast switching, and are ideal for motor drives.
ROHM Semiconductor Automotive 40A & 80A Power MOSFETs
06/16/2025
06/16/2025
Feature low on-resistance and are ideal for ADAS, automotive, and lighting applications.
ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET
06/04/2025
06/04/2025
Compact, high-performance MOSFET designed for low-voltage switching applications.
ROHM Semiconductor RH7G04CBKFRA P-Ch Power MOSFET
03/13/2025
03/13/2025
AEC-Q101 qualified for automotive applications, including infotainment, lighting, ADAS, and body.
ROHM Semiconductor RH7G04CBJFRA P-Ch Power MOSFET
03/13/2025
03/13/2025
AEC-Q101 qualified for automotive applications, including infotainment, lighting, ADAS, & body.
ROHM Semiconductor RJ1N04BBH N-Ch Power MOSFET
03/12/2025
03/12/2025
Offers an 80V drain-source voltage with low on-resistance in a high-power TO263AB package.
ROHM Semiconductor RS7 Power MOSFETs
01/16/2025
01/16/2025
Designed for performance in motor drives, switching applications, and DC/DC converters.
ROHM Semiconductor RGE Field Stop Trench IGBTs
01/15/2025
01/15/2025
Features low collector-emitter saturation voltage and low switching loss.
ROHM Semiconductor GNP2x 650V Enhancement Mode GaN HEMTs
01/10/2025
01/10/2025
Designed for high-performance power conversion applications.
ROHM Semiconductor RGA80Tx 1200V Field Stop Trench IGBTs
10/17/2024
10/17/2024
These feature low switching & conduction loss and are ideal for electric compressors and HV heaters.
ROHM Semiconductor RD3G08CBLHRB N-Channel Power MOSFET
08/01/2024
08/01/2024
40V, 80A, 100% Avalanche tested, AEC-Q101 qualified, and RoHS-compliant.
ROHM Semiconductor BSS138WAHZG N-Ch 60V 310mA Small Signal MOSFET
06/20/2024
06/20/2024
May iba't ibang feature para ma-optimize ang performance at reliability.
ROHM Semiconductor Mga RQ3xFRATCB Power MOSFET
06/11/2024
06/11/2024
Mga AEC-Q101-qualified at automotive-grade MOSFET, nasa maliit na 3.3mm x 3.3mm na high-powered package.
ROHM Semiconductor RV7x N-Ch Middle Power MOSFETs
05/20/2024
05/20/2024
Provide low on-resistance & excellent thermal conduction in a leadless ultra-small SMD package.
ROHM Semiconductor RF6L025BG Power MOSFET
02/02/2024
02/02/2024
Features 60V VDSS, ±2.5A ID, 91mΩ low on-resistance (RDS(on)), and 1W power dissipation (PD).
ROHM Semiconductor RF6G035BG Power MOSFET
02/02/2024
02/02/2024
Features 40V VDSS, ±3.5A ID, 46mΩ low on-resistance (RDS(on)), and 1W power dissipation (PD).
ROHM Semiconductor RQ3L060BG Power MOSFET
01/19/2024
01/19/2024
Nagtatampok ng 60V VDSS, ±15.5A ID, 38mΩ na low on-resistance (RDS(on)), at 14W na power dissipation.
ROHM Semiconductor R8019KNXC7G N-Ch 800V 19A Power MOSFETs
01/04/2024
01/04/2024
Offers low on-resistance with fast switching and is RoHS compliant.
ROHM Semiconductor SCT4045DWAHR AEC-Q101 N-Channel SiC Power MOSFET
11/27/2023
11/27/2023
Features a drain-source voltage rating of 750V and a continuous drain current of 31A (at +25°C).
ROHM Semiconductor R6049YN N-Channel Power MOSFETs
09/19/2023
09/19/2023
Offers high-speed switching and low-on resistances for switching applications.
ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs
08/18/2023
08/18/2023
Offers dual N-channel or N-channel/P-channel transistor polarity in small HSMT8 and HSOP8 packages.
ROHM Semiconductor SCT4062KWAHR AEC-Q101 N-Channel SiC Power MOSFET
08/03/2023
08/03/2023
Features a high 1200V drain-source voltage rating and a continuous drain current of 24A (at +25°C).
ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs
07/25/2023
07/25/2023
Designed for demanding electronics systems, blends high power density and efficiency.
ROHM Semiconductor RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs
05/24/2023
05/24/2023
HSOP-8 and HSMT-8 packaged MOSFETs with high current handling capability/reduced package resistance.
ROHM Semiconductor RS6N120BH N-Channel Power MOSFET
05/19/2023
05/19/2023
Compact low-loss MOSFET featuring a Cu clip structure contributing to high-efficiency operation.
Tinitingnan ang: 1 - 25 ng 30
Nexperia BUK9Q N-Channel Trench MOSFET
09/09/2025
09/09/2025
Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
07/03/2025
07/03/2025
40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
07/03/2025
07/03/2025
Normally off e-mode devices that deliver superior performance and very low on-state resistance.
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETs
07/01/2025
07/01/2025
These FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.
ROHM Semiconductor Small Signal Dual Channel MOSFETs
06/30/2025
06/30/2025
Feature low on-resistance and fast switching, and are ideal for motor drives.
Littelfuse Mga IXSJxN120R1 1200V SiC Power MOSFET
06/23/2025
06/23/2025
High-performance devices designed for demanding power conversion applications.
onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFET
06/23/2025
06/23/2025
Delivers excellent thermal performance and low RDS(on) in a compact 5mm x 6mm PowerFLAT package.
ROHM Semiconductor Automotive 40A & 80A Power MOSFETs
06/16/2025
06/16/2025
Feature low on-resistance and are ideal for ADAS, automotive, and lighting applications.
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
onsemi NVMFDx 100V Dual N-Channel Power MOSFETs
06/09/2025
06/09/2025
Features low RDS(on) values and fast switching characteristics in a space-saving DFN-8 package.
ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET
06/04/2025
06/04/2025
Compact, high-performance MOSFET designed for low-voltage switching applications.
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs
06/03/2025
06/03/2025
Automotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs
06/03/2025
06/03/2025
Features low on-resistance, reducing energy losses and improving overall system efficiency.
Infineon Technologies CoolMOS™ CM8 650V Power MOSFETs
06/03/2025
06/03/2025
Designed according to the Superjunction (SJ) principle to offer low switching and conduction losses.
onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) Module
05/23/2025
05/23/2025
Features 15mΩ/1200V M3S SiC MOSFET full-bridge and a thermistor with Al2O3 DBC in an F1 package.
STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBT
05/22/2025
05/22/2025
Created by implementing an advanced proprietary trench gate field-stop structure.
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET
05/22/2025
05/22/2025
Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.
Ampleon BLP981 LDMOS Power Transistor
05/15/2025
05/15/2025
170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.
Ampleon BLF981/BLF981S LDMOS Power Transistors
05/15/2025
05/15/2025
Designed for high-efficiency broadband applications across a frequency range from HF to 1400MHz.
Wolfspeed YM Six-Pack Silicon Carbide Power Modules
05/14/2025
05/14/2025
Automotive-qualified modules that are designed for seamless design integration and durability.
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
05/13/2025
05/13/2025
Engineered to handle high currents, which is crucial for DC-DC power conversion stages.
APC-E Silicon Carbide (SiC) MOSFETs
05/06/2025
05/06/2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Infineon Technologies 700V CoolGaN™ G5 Power Transistors
05/02/2025
05/02/2025
Designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching.
Infineon Technologies OptiMOS™ 6 200V Power MOSFETs
04/30/2025
04/30/2025
Offer excellent gate charge x RDS(on) product (FOM) and low on‑resistance RDS(on).
onsemi NVBLS1D2N08X MOSFET
04/28/2025
04/28/2025
Features a low QRR, RDS(on), and QG to minimize driver and conduction loss.
Tinitingnan ang: 1 - 25 ng 493