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STE145N65M5

Name: STMicroelectronics STE145N65M5
Brand: STMicroelectronics
SKU: 511-STE145N65M5
Price: 1682 PHP
Availability: InStock

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Mouser #:

511-STE145N65M5

Mfr. #:

STE145N65M5

Mfr.:

STMicroelectronics

Paglalarawan:

MOSFET Modules N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa

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Datasheet:

STE145N65M5 Datasheet (PDF)

ECAD Model:

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May Stock: 390

Stock:: 390

Maaaring Ipadala Agad

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Inoorder:: 200
Lead-Time ng Pabrika:: 18

(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,682.00	₱1,682.00
	₱1,299.20	₱12,992.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga MOSFET Module
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Screw Mount
Package / Case:	ISOTOP
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	143 A
Rds On - Drain-Source Resistance:	15 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Series:	Mdmesh M5
Packaging:	Bulk
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	MA
Uri ng Produkto:	MOSFET Modules
Dami ng Pack ng Pabrika:	100
Subcategory:	Discrete and Power Modules
Pangalang pangkalakal:	MDmesh
Uri:	MOSFET
Vr - Reverse Voltage:	650 V
Timbang ng Unit:	28.200 g

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Mga Piniling Attribute: 0

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Datasheet

STE145N65M5 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R_DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.