POWER MOS 8 Mga IGBT

Mga Resulta: 3
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Package / Case
Isitilo ng Mounting
Kumpigurasyon
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum na Gate Emitter Voltage
Tuloy-tuloy na Collector Current sa 25 C
Pd - Power Dissipation
Minimum na Operating Temperature
Maximum na Operating Temperature
Packaging
Microchip Technology IGBTs IGBT PT MOS 8 Combi 600 V 80 A TO-264
Datasheet

Si TO-264-3 Through Hole Single 600 V 2 V - 30 V, 30 V 143 A 625 W - 55 C + 150 C Tube
Microchip Technology IGBTs IGBT PT MOS 8 Combi 900 V 64 A TO-264
Datasheet

Si TO-264-3 Through Hole Single 900 V 2.5 V - 20 V, 20 V 117 A 500 W - 55 C + 150 C Tube
Microchip Technology IGBTs IGBT PT MOS 8 Single 600 V 80 A TO-247
Datasheet

Si TO-247-3 Through Hole Single 600 V 2 V - 20 V, 20 V 143 A 625 W - 55 C + 150 C Tube