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STMicroelectronics Mga SiC MOSFET

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Mga Resulta: 68

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Brand = STMicroelectronics

Isitilo ng Mounting

Package / Case

Polarity ng Transistor

Dami ng Channel

Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

Minimum na Operating Temperature

Maximum na Operating Temperature

Pd - Power Dissipation

Channel Mode

Kuwalipikasyon

I-reset Lahat

Maghanap sa loob ng mga resulta

May Stock

Karaniwang May Stock

Aktibo

Mga Bagong Produkto

Sumusunod sa RoHS

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Download ang Table (.CSV)

# ng Piyesa

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A

SCT018HU65G3AG
STMicroelectronics
1: ₱1,160.58
Lead-Time para sa Hindi Naka-stock 22 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT018HU65G3AG

# ng Piyesa ng Mouser
511-SCT018HU65G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A

Datasheet

Lead-Time para sa Hindi Naka-stock 22 (na) Linggo

Cut Tape

₱1,160.58

₱929.74

₱872.90

Reel

₱741.24

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

650 V

60 A

29 mOhms

-10 V, 22 V

4.2 V

82.5 nC

- 55 C

+ 175 C

388 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A

SCT018W65G3AG
STMicroelectronics
600: ₱740.08
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT018W65G3AG

# ng Piyesa ng Mouser
511-SCT018W65G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

₱740.08

Min.: 600
Mult.: 600

Through Hole

HiP247-3

N-Channel

1 Channel

650 V

55 A

27 mOhms

-10 V, 22 V

4.2 V

76 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package

SCT019W120G3-4AG
STMicroelectronics
1: ₱1,180.30
Lead-Time para sa Hindi Naka-stock 22 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT019W120G3-4AG

# ng Piyesa ng Mouser
511-SCT019W120G3-4AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package

Datasheet

Lead-Time para sa Hindi Naka-stock 22 (na) Linggo

₱1,180.30

₱983.68

₱971.50

₱852.60

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

90 A

26 mOhms

- 10 V, + 22 V

4.2 V

120 nC

- 55 C

+ 200 C

486 W

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A

SCT020H120G3AG
STMicroelectronics
1: ₱1,069.52
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT020H120G3AG

# ng Piyesa ng Mouser
511-SCT020H120G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A

Alamin Pa

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

Cut Tape

₱1,069.52

₱856.66

₱740.66

₱740.08

Reel

₱654.82

Min.: 1
Mult.: 1

: 1,000

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4
STMicroelectronics
600: ₱763.86
Lead-Time para sa Hindi Naka-stock 22 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT025W120G3-4

# ng Piyesa ng Mouser
511-SCT025W120G3-4

Bagong Produkto

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Datasheet

Lead-Time para sa Hindi Naka-stock 22 (na) Linggo

₱763.86

Min.: 600
Mult.: 600

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

-10 V, 22 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package

SCT027TO65G3
STMicroelectronics
1,800: ₱491.84
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT027TO65G3

# ng Piyesa ng Mouser
511-SCT027TO65G3

Bagong Produkto

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package

Datasheet

Lead-Time para sa Hindi Naka-stock 20 (na) Linggo

Reel

₱491.84

Min.: 1,800
Mult.: 1,800

: 1,800

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3
STMicroelectronics
600: ₱749.94
Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT040W120G3

# ng Piyesa ng Mouser
511-SCT040W120G3

Bagong Produkto

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Datasheet

Lead-Time para sa Hindi Naka-stock 32 (na) Linggo

₱749.94

Min.: 600
Mult.: 600

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

-10 V, 22 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

SCT070H120G3-7
STMicroelectronics
1,000: ₱335.82
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT070H120G3-7

# ng Piyesa ng Mouser
511-SCT070H120G3-7

Bagong Produkto

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

Alamin Pa

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

Reel

₱335.82

Min.: 1,000
Mult.: 1,000

: 1,000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 10 V, + 22 V

3 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4
STMicroelectronics
1: ₱634.52
Lead-Time para sa Hindi Naka-stock 22 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT070W120G3-4

# ng Piyesa ng Mouser
511-SCT070W120G3-4

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Alamin Pa

Datasheet

Lead-Time para sa Hindi Naka-stock 22 (na) Linggo

₱634.52

₱378.74

₱343.94

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1.2 kV

30 A

87 mOhms

- 10 V, + 22 V

3 V

41 nC

- 55 C

+ 200 C

236 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A

SCT070W120G3AG
STMicroelectronics
1: ₱704.70
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT070W120G3AG

# ng Piyesa ng Mouser
511-SCT070W120G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A

Alamin Pa

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

₱704.70

₱573.62

₱478.50

₱397.88

Min.: 1
Mult.: 1

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A

SCTHCT250N12G3AG
STMicroelectronics
448: ₱3,314.70
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCTHCT250N12G3AG

# ng Piyesa ng Mouser
511-SCTHCT250N12G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A

Datasheet

Lead-Time para sa Hindi Naka-stock 20 (na) Linggo

₱3,314.70

Min.: 448
Mult.: 448

Through Hole

N-Channel

1 Channel

1.2 kV

239 A

10.5 mOhms

-10 V, 22 V

4.4 V

304 nC

- 55 C

+ 200 C

994 W

Enhancement

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247

SCTWA90N65G2V
STMicroelectronics
600: ₱1,160.00
Lead-Time para sa Hindi Naka-stock 22 (na) Linggo

Mfr. # ng Piyesa
SCTWA90N65G2V

# ng Piyesa ng Mouser
511-SCTWA90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247

Alamin Pa

Datasheet

Lead-Time para sa Hindi Naka-stock 22 (na) Linggo

₱1,160.00

Min.: 600
Mult.: 600

Through Hole

HiP-247-3

N-Channel

1 Channel

650 V

119 A

24 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 200 C

565 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A

SCT012HU90G3AG
STMicroelectronics
600: ₱1,078.80
Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT012HU90G3AG

# ng Piyesa ng Mouser
511-SCT012HU90G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A

Datasheet

Lead-Time para sa Hindi Naka-stock 18 (na) Linggo

Reel

₱1,078.80

Quote

Min.: 600
Mult.: 600

: 600

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an

SCT019H120G3AG
STMicroelectronics
1,000: ₱623.50
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT019H120G3AG

# ng Piyesa ng Mouser
511-SCT019H120G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

Reel

₱623.50

Min.: 1,000
Mult.: 1,000

: 1,000

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package

SCT040H65G3-7
STMicroelectronics
1,000: ₱403.68
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT040H65G3-7

# ng Piyesa ng Mouser
511-SCT040H65G3-7

Bagong Produkto

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

Reel

₱403.68

Min.: 1,000
Mult.: 1,000

: 1,000

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A

SCT040W65G3AG
STMicroelectronics
600: ₱396.14
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT040W65G3AG

# ng Piyesa ng Mouser
511-SCT040W65G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

₱396.14

₱360.76

Min.: 600
Mult.: 600

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package

SCT055H65G3-7
STMicroelectronics
1,000: ₱290.00
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT055H65G3-7

# ng Piyesa ng Mouser
511-SCT055H65G3-7

Bagong Produkto

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

Reel

₱290.00

Min.: 1,000
Mult.: 1,000

: 1,000

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055H65G3AG
STMicroelectronics
1: ₱615.96
Lead-Time para sa Hindi Naka-stock 21 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT055H65G3AG

# ng Piyesa ng Mouser
511-SCT055H65G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Alamin Pa

Datasheet

Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

Cut Tape

₱615.96

₱426.88

₱354.96

Reel

₱331.76

Min.: 1
Mult.: 1

: 1,000

AEC-Q100

STMicroelectronics Mga SiC MOSFET

Customer Service Office

Kumpanya

Mga Mapagkukunan

Suporta

6 A
7 A
12 A
20 A
30 A
33 A
35 A
36 A
40 A
55 A
56 A
60 A
90 A
91 A
100 A
110 A
112 A
119 A
129 A
239 A

10.5 nC
10.5 mOhms
12 mOhms
15 mOhms
15.8 mOhms
18 mOhms
21 mOhms
22 mOhms
24 mOhms
25 mOhms
26 mOhms
27 mOhms
28 mOhms
29 mOhms
30 mOhms
37 mOhms
39.3 mOhms
40 mOhms
54 mOhms
63 mOhms

14 nC
22 nC
29 nC
31 nC
32 nC
36 nC
37 nC
37.5 nC
39.5 nC
41 nC
42.5 nC
45 nC
48.6 nC
51 nC
54 nC
56 nC
61 nC
63 nC
73 nC
76 nC

120 W
150 W
175 W
185 W
210 W
221 W
223 W
234 W
236 W
240 W
266 W
278 W
288 W
290 W
300 W
312 W
313 W
375 W
385 W
388 W