Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs are general-purpose, normally off e-mode devices that deliver superior performance and very low on-state resistance.
The GANE7R0-100CBA is a 100V, 7.0mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). The GANE2R7-100CBA is 100V, 2.7mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). The GANE1R8-100QBA is a 100V, 1.8mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead (VQFN) package.
The Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs are ideal for high-power density and high-efficiency power conversion, class D audio amplifiers, fast battery charging, and AC-to-DC converters.
Features
- Enhancement mode - normally-off power switch
- Ultra-high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- RoHS, Pb-free, REACH-compliant
- High efficiency and high power density
- Wafer Level Chip-Scale Package (WLCSP) 2.5mm x 1.5mm (GANE7R0-100CBA)
- Wafer Level Chip-Scale Package (WLCSP) 4.45mm x 2.30mm (GANE2R7-100CBA)
- Very-Thin-Profile Quad Flat No-Lead package (VQFN) 4.0mm x 6.0mm (GANE1R8-100QBA)
Applications
- High power density and high efficiency power conversion
- AC-to-DC converters (secondary stage)
- High frequency DC-to-DC converters in 48V systems
- 400V to 48V LLC converters, secondary (rectification) side (GANE7R0-100CBA and GANE2R7-100CBA)
- Class D audio amplifiers
- Fast battery charging, mobile phone, laptop, tablet, and USB Type-C® chargers
- Datacom and telecom (AC-to-DC and DC-to-DC) converters
- Motor drives
- LiDAR (non-automotive)
Datasheets
GANE7R0-100CBA Pinning
GANE2R7-100CBA Pinning
GANE1R8-100QBA Pinning
Inilathala: 2025-06-25
| Na-update: 2025-07-03