GP3T Serye Mga SiC MOSFET

Mga Resulta: 4
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
SemiQ SiC MOSFETs Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
Datasheet
28May Stock
Available ang Higit Pang Impormasyon
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 280 A 25 mOhms - 4.5 V, + 18 V 4 V 234 nC - 55 C + 175 C 429 W Enhancement
SemiQ SiC MOSFETs Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L
Datasheet
134May Stock
30Inoorder
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 140 A 52 mOhms - 4.5 V, + 18 V 4 V 108 nC - 55 C + 175 C 246 W Enhancement
SemiQ SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
Datasheet
122May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 70 A 100 mOhms - 4.5 V, + 18 V 4 V 53 nC - 55 C + 175 C 147 W Enhancement
SemiQ SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L
Datasheet
Hindi Naka-stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 350 A 23 mOhms - 4.5 V, + 18 V 4 V 260 nC - 55 C + 175 C 484 W Enhancement