IXTH30N60 Serye Mga MOSFET

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Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Pangalang pangkalakal
Packaging

IXYS MOSFETs 30 Amps 600V
Datasheet
3,780May Stock
Available ang Higit Pang Impormasyon
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 20 V, 20 V 2.5 V 335 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube

IXYS MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
Datasheet
288May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 30 V, 30 V 5 V 82 nC - 55 C + 150 C 540 W Enhancement PolarHV Tube